dpg 60 c 400 hb ns hiperfred2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 360 i a v f 1.41 r 0.95 k/w v r = 1 2 3 min. 30 t = 10 ms applications: v rrm v 400 1 t vj vc = t vj c =ma 0.2 package: part number v r = t vj =c i f =a v t c = 135c d = p tot 160 w t c c = t vj 175 c -55 v i rrm = = 400 30 30 t vj = 45c dpg 60 c 400 hb v a 400 v 400 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.69 t vj c =25 c j j unction capacitance v = v; t 150 v f0 v 0.76 t vj = 175c r f 10.7 f = 1 mhz = c 25 m ? v 1.13 t vj =c i f =a v 30 1.46 i f =a 60 i f =a 60 2x threshold voltage slope resistance for power loss calculation only backside: cathode 4a t vj =c reverse recovery time a 8.5 45 85 ns (50 hz), sine t rr = 45 ns housing: high performance fast recovery diode low loss and soft recovery common cathode to-247 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 30 25 t= 125c vj -di f =a/s 200 /dt t rr v r =v 270 t vj =c 25 t= 125c vj a 39 200 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 150 ixys reserves the right to change limits, conditions and dimensions. ? 20100125a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 60 c 400 hb i rms a per pin 50 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dpg 60 c 400 hb 505825 tube 30 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking d p g 60 c 400 hb part number diode hiperfred extreme fast common cathode to-247ad (3) = = = dpg60c400qb DPG80C400HB to-3p (3) to-247ad (3) similar part package 1) 1 ) marking on product dpg60c400hb 400 400 voltage class current rating [a] reverse voltage [v] = = = = rms ixys reserves the right to change limits, conditions and dimensions. ? 20100125a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 60 c 400 hb sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. ? 20100125a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 60 c 400 hb 0.0 0.4 0.8 1.2 1.6 2.0 10 20 30 40 50 60 70 80 0 200 400 600 0 20 40 60 80 100 120 140 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 04080120160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 k f t vj [c] -di f /dt [a/s] t [ms] 0 200 400 600 0 100 200 300 400 500 600 700 2 4 6 8 10 12 14 16 0 200 400 600 0 4 8 12 16 20 0 200 400 600 0.0 0.2 0.4 0.6 0.8 1.0 q rr [c] v f [v] -di f /dt [a/s] z thjc [k/w] i f = 60 a 30 a 15 a i rr q rr v fr t fr t vj = 150c fig. 1 forward current i f versus forward voltage v f fig. 2 typ. reverse recovery charge q rr versus -di f /dt fig. 3 typ. reverse recovery current i rr versus -di f /dt fig. 4 dynamic parameters q rr ,i rr versus t vj fig. 5 typ. reverse recovery time t rr versus -di f /dt fig. 6 typ. forward recovery voltage v fr & forward recovery time t fr vs. di f /dt fig. 8 transient thermal impedance junction to case 25c i f [a] -di f /dt [a/s] i rr [a] t rr [ns] -di f /dt [a/s] t fr [ns] v fr [v] 0 200 400 600 0 10 20 30 40 50 e rec [j] -di f /dt [a/s] fig. 7 typ. recovery energy e rec versus -di f /dt i f =60 a 30 a 15 a i f = 60 a 30 a 15 a i f =60a 30 a 15 a t vj =125c v r =270 v t vj =125c v r = 270 v t vj = 125c v r = 270 v t vj = 125c v r = 270 v i f =30a t vj = 125c v r = 270 v ixys reserves the right to change limits, conditions and dimensions. ? 20100125a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
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